Electrochemically deposited NiO films as a blocking layer in p-type dye-sensitized solar cells with an impressive 45% fill factor
The enhancement of photoelectrochemical conversion efficiency of p‐type dye‐sensitized solar cells (p‐DSSCs) is necessary to build up effective tandem devices in which both anode and cathode are photoactive. The efficiency of a p‐type device (2.5%) is roughly one order of magnitude lower than the n‐type counterparts (13.1%), thus limiting the overall efficiency of the tandem cell, especially in terms of powered current density. This is mainly due to the recombination reaction that occurs especially at the photocathode (or Indium‐doped Tin Oxide (ITO))/electrolyte interface.