CMOS integrated circuits

Univariate power analysis attacks exploiting static dissipation of nanometer CMOS VLSI circuits for cryptographic applications

In this work we focus on Power Analysis Attacks (PAAs) which exploit the dependence of the static current of sub- 50nm CMOS integrated circuits on the internally processed data. Spice level simulations of static current as a function of the input state have been carried out to show that static power consumption of nanometer logic gates continues to exhibit a strong dependence on input vector even for sub-50nm circuits and that the coefficient of variation for a nand gate is strongly increasing with the scaling of CMOS technology.

Dark current spectroscopy of transition metals in CMOS image sensors

We have investigated the effects of deliberate heavymetals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-Testing equipment, these impurities can be identified and detected with a sensitivity of ?

© Università degli Studi di Roma "La Sapienza" - Piazzale Aldo Moro 5, 00185 Roma