III–V semiconductors nanowires

A multi-purpose low-energy proton source for tailoring the properties of quantum materials, advanced insulators for optics, and solid cells for energy applications (AMLET)

Italiano

The Kaufman source acquired allows varying the proton beam energy from 10 to 1200 eV with a high degree of reproducibility and control. The same applies to the dose of incorporated protons. These very important parameters are typically hard to control by other systems, such as plasma sources or electrochemical methods. Indeed, Kaufman sources are configured to have the region of gas ionization physically separate from the intended target, avoiding exposure of the samples to intense and potentially damaging electric fields.

Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires

III–V semiconductors nanowires (NW) have recently attracted a significant interest for their potential application in the development of high efficiency, highly-integrated photonic devices and in particular for the possibility to integrate direct bandgap materials with silicon-based devices. Here we report the absorbance properties of GaAs-AlGaAs-GaAs core-shell-supershell NWs using photo-acoustic spectroscopy (PAS) measurements in the spectral range from 300?nm to 1100?nm wavelengths.

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