Ricerc@Sapienza

We present a new technique which allows the growth of silicon nanostructures at low temperature, in different forms. The growth takes place with the presence of a gaseous silicon precursor and a metal catalyst, once the eutectic temperature is overcome. The technique we present is based on heating limited to the metal nanoparticles, by irradiation of Microwaves. The so called nano-susceptors absorbs energy that produces large local increase of temperature. Only the metal nanoparticles reach high temperatures.

Radiofrequency electromagnetic fields (EMFs) are used to enable a number of modern devices, including mobile telecommunications infrastructure and phones, Wi-Fi, and Bluetooth. As radiofrequency EMFs at sufficiently high power levels can adversely affect health, ICNIRP published Guidelines in 1998 for human exposure to time-varying EMFs up to 300 GHz, which included the radiofrequency EMF spectrum.