Integration of graphene onto silicon through electrochemical reduction of graphene oxide layers in non-aqueous medium
Wafer-scale integration of reduced graphene oxide with H-terminated Si(1 1 1) surfaces has been accomplished by electrochemical reduction of a thin film of graphene oxide deposited onto Si by drop casting. Two reduction methods have been assayed and carried out in an acetonitrile solution. The initial deposit was subjected either to potential cycling in a 0.1 M TBAPF 6 /CH 3 CN solution at scan rates values of 20 mV s −1 and 50 mV s −1 , or to a potentiostatic polarization at E λ,c = −3 V for 450 s.