Quantitative evaluation of emission properties and thermal hysteresis in the mid-infrared for a single thin film of vanadium dioxide on a silicon substrate
We present a comparative study of the emission properties of a vanadium dioxide thin film (approximately 200 nm) deposited on a silicon wafer in different sub-spectral-ranges of the mid-infrared, with particular attention to the windows of transparency of the atmosphere to the infrared radiation (i.e., 3–5 μm, 8–12 μm). The infrared emission properties of the structure are closely related to the well-known phase transition of the first order, from semiconductor to metal, of the vanadium dioxide around the temperature of 68 °C.