Phase Change Materials

Quantitative evaluation of emission properties and thermal hysteresis in the mid-infrared for a single thin film of vanadium dioxide on a silicon substrate

We present a comparative study of the emission properties of a vanadium dioxide thin film (approximately 200 nm) deposited on a silicon wafer in different sub-spectral-ranges of the mid-infrared, with particular attention to the windows of transparency of the atmosphere to the infrared radiation (i.e., 3–5 μm, 8–12 μm). The infrared emission properties of the structure are closely related to the well-known phase transition of the first order, from semiconductor to metal, of the vanadium dioxide around the temperature of 68 °C.

Long-wave infrared emissivity characterization of vanadium dioxide-based multilayer structure on silicon substrate by temperature-dependent radiometric measurements

This paper studies the IR properties of a VO2-based multilayer structure with an emittance that increase with the temperature. A good tunability of the emissivity in long-wave infrared spectral region (8–12 µm) has been detected, with a positive emissivity differential of about 0.2. The transition of the long wave emissivity ε with the temperature is fully reversible according to a hysteresis cycle, with a transition temperature of 67 °C and a thermal bandwidth of only 8 °C. The multilayer structure also shows two emission peaks both in the heating cycle and in the cooling cycle.

Near-infrared modulation by means of GeTe/SOI-based metamaterial

Today, nanophotonics still lacks components for modulation that can be easily implementable in existing silicon-on-insulator (SOI) technology. Chalcogenide phase change materials (PCMs) are promising candidates for tuning in the near infrared: at the nanoscale, thin layers can provide enough contrast to control the optical response of a nanostructure. Moreover, all-dielectric metamaterials allow for resonant behavior without having ohmic losses in the telecom range. Here, a novel hybridization of a SOI-based metamaterial with PCM GeTe is experimentally investigated.

Thin films of phase change materials for light control of metamaterials in the optical and infrared spectral domain

Nanophotonic component can be tuned by means of a thin phase change material (PCM) film put in its vicinity; PCM changes phases upon heat stimuli and thus provides a phase or amplitude optical contrast at the nanoscale. Vanadium dioxide (VO2) is a promising material which undergoes semiconductor-to-metal phase transition at about 68 °C. In this work we combine its transition with a metamaterial made of golden nanodiscs, in the infrared spectral range.

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