Control of Electron-State Coupling in Asymmetric Ge/Si−Ge Quantum Wells
Theoretical predictions indicate that the n-type Ge/Si-Ge multi-quantum-well system is the most promising material for the realization of a Si-compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study, both experimentally and theoretically, asymmetric coupled multi-quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture.