Long-wave infrared emissivity characterization of vanadium dioxide-based multilayer structure on silicon substrate by temperature-dependent radiometric measurements
This paper studies the IR properties of a VO2-based multilayer structure with an emittance that increase with the temperature. A good tunability of the emissivity in long-wave infrared spectral region (8–12 µm) has been detected, with a positive emissivity differential of about 0.2. The transition of the long wave emissivity ε with the temperature is fully reversible according to a hysteresis cycle, with a transition temperature of 67 °C and a thermal bandwidth of only 8 °C. The multilayer structure also shows two emission peaks both in the heating cycle and in the cooling cycle.