The objective of the project is to design, build and test a high switching frequency, wide-bandgap-semiconductor-based, three-phase voltage source inverter for high-frequency electromechanical energy conversion. Such a converter is a key element in the trend towards higher power density in next generation light-duty vehicle powertrains. Gallium nitride High Electron Mobility Transistors will be used instead of standard silicon Insulated Gate Bipolar Transistors. Although it is known that the use of these ultra-fast switches allows to reach extremely high power densities, key issues related to the high dv/dt, which comes hand in hand with this technology, haven't been fully investigated in the literature. The main aim of this research project is to gain experience with this new power semiconductor technology and to understand and quantify its limitations when used in a high speed traction drive system for next generation hybrid vehicles.
The expected main scientific and technological impacts of the project are:
- successful design, building and testing of an ultra-high switching-frequency three-phase voltage source inverter with an output filter;
- proof that the use of wide-bandgap semiconductors allows reaching very high fundamental supply frequencies at very high efficiencies, as required by high-frequency electromechanical energy conversion;
- successful deployment of this inverter in a high speed drive.
The outcomes of this research project will be presented in the form of a paper at an international conference of relevance to the field of power converters, such as IEEE ECCE. In addition, it is envisaged that the results have the potential to be published on an international journal, such as IEEE Transactions on Power Electronics.