DIPARTIMENTO DI FISICA

type: 
department
url: 
https://www.phys.uniroma1.it

ARPES @ Lotus Laboratory

English

In the following, the main characteristics of the apparatus:
* ARPES hemispherical electron analyser: Scienta SES-200, 4 meV best energy resolution, <0.1 angular resolution, 1-50 eV pass-energy range, multi-channel detector (MCD, 8 angular span and 10% of pass-
energy energy span);
* ARPES photon source: Omicron-Scienta VUV-5000 monochromatised MW-excited He source, main lines HeI at 21.218 eV and HeII at 40.814 eV, up to HeII at 52.241 eV;

XPS LotusLab

English

• XPS hemispherical electron analyser: VG Microtech Clam-2, pass-energy range: 10-200 eV, single-channel detector;
• XPS photon source: PSP double-anode X-ray source, emission lines AlKα (1486.6 eV) MgKα (1253.6 eV);
• XPS UHV manipulator: 4-degrees of freedom, cryostat (>77 K), electron-bombardment heater (≤1200 K);
• Low-Energy Electron Diffraction (LEED): Omicron SpectaLEED system, with LEED and Auger modules;
• Ion Gun: Omicron ISE10 0.2-5 keV energy range, Ar ion source;

ARPES LotusLab

English

• ARPES hemispherical electron analyser: Scienta SES-200, 4 meV best energy resolution, <0.1◦ angular resolution, 1-50 eV pass-energy range, multi-channel detector (MCD, ±8◦ angular span and 10% of pass-
energy energy span);

• ARPES photon source: Omicron-Scienta VUV-5000 monochromatised MW-excited He source, main lines HeIα at 21.218 eV and HeIIα at 40.814 eV, up to HeIIδ at 52.241 eV;

Ion beam source

English

The ion beam source acquired allows the incorporation of low-energy hydrogen ions in several technologically relevant materials. The system operates under vacuum conditions and permit a tight control over the ion beam energy and current.

The source can be exploited in a wide range of materials, from insulatora and semicondutors to metals.

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