COBBS - Comportamenti collettivi in sistemi biologici
Laboratorio di stereoscopia digitale, computer vision e analisi dati
Laboratorio di stereoscopia digitale, computer vision e analisi dati
Test e caratterizzazione di rivelatori criogenici per la ricerca di fisica oltre il modello standard.
In the following, the main characteristics of the apparatus:
* ARPES hemispherical electron analyser: Scienta SES-200, 4 meV best energy resolution, <0.1 angular resolution, 1-50 eV pass-energy range, multi-channel detector (MCD, 8 angular span and 10% of pass-
energy energy span);
* ARPES photon source: Omicron-Scienta VUV-5000 monochromatised MW-excited He source, main lines HeI at 21.218 eV and HeII at 40.814 eV, up to HeII at 52.241 eV;
• XPS hemispherical electron analyser: VG Microtech Clam-2, pass-energy range: 10-200 eV, single-channel detector;
• XPS photon source: PSP double-anode X-ray source, emission lines AlKα (1486.6 eV) MgKα (1253.6 eV);
• XPS UHV manipulator: 4-degrees of freedom, cryostat (>77 K), electron-bombardment heater (≤1200 K);
• Low-Energy Electron Diffraction (LEED): Omicron SpectaLEED system, with LEED and Auger modules;
• Ion Gun: Omicron ISE10 0.2-5 keV energy range, Ar ion source;
• ARPES hemispherical electron analyser: Scienta SES-200, 4 meV best energy resolution, <0.1◦ angular resolution, 1-50 eV pass-energy range, multi-channel detector (MCD, ±8◦ angular span and 10% of pass-
energy energy span);
• ARPES photon source: Omicron-Scienta VUV-5000 monochromatised MW-excited He source, main lines HeIα at 21.218 eV and HeIIα at 40.814 eV, up to HeIIδ at 52.241 eV;
The equipment allows to synchronize the two nodes of the free-space quantum-optical link between the Marconi and Fermi buildings of the Department of Physics, and to compensate for atmospheric turbolences which induce wavefront distorsions. It consists of two main items described below:
The ion beam source acquired allows the incorporation of low-energy hydrogen ions in several technologically relevant materials. The system operates under vacuum conditions and permit a tight control over the ion beam energy and current.
The source can be exploited in a wide range of materials, from insulatora and semicondutors to metals.
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