Characterization of GaN HEMT Transistors for DC/DC Converters in Transportation Applications
The motivation of this work is the characterization
of semiconductor switches in DC/DC Wide Band-Gap based
converters for electrical vehicle applications. The paper studies
Gallium Nitride High Electron Mobility (GaN HEMT) Transistors,
which present very good features for high-frequency highefficiency
applications. In order to obtain an efficient DC/DC
converter design, a full characterization of these devices must be
carried out. A double pulse test is applied to the GaN device,