Ricerc@Sapienza

The motivation of this work is the characterization
of semiconductor switches in DC/DC Wide Band-Gap based
converters for electrical vehicle applications. The paper studies
Gallium Nitride High Electron Mobility (GaN HEMT) Transistors,
which present very good features for high-frequency highefficiency
applications. In order to obtain an efficient DC/DC
converter design, a full characterization of these devices must be
carried out. A double pulse test is applied to the GaN device,
in order to study the switching behavior of these transistors.
The test will be performed experimentally and in simulation
under different operating conditions, in order to have the ability
to understand the difference in the transistor behavior under
these different operating points. Finally, the obtained results
will be presented, commented and compared to identify the
particularities of these devices.