photodiodes

aSiDaS (amorphous Silicon Devices and Systems)

aSiDaS (amorphous Silicon Devices and Systems)

La ricerca riguarda le applicazioni di film sottili di silicio amorfo idrogenato (a-Si:H) in elettronica a larga area e sensoristica, depositato per PECVD su substrati rigidi e flessibili. Le attività permettono l'intero ciclo di progettazione, fabbricazione e caratterizzazione di dispositivi e sistemi in a-Si:H. In particolare:

Thin film photosensor integrated on planar waveguide for lab-on-chip applications

We present a device based on amorphous silicon photosensors and glass-diffused waveguides to be used inside lab-on-chip systems, to perform biomolecular recognition by means of optical interaction with the analyte. A 150 × 300 μm2 p-i-n photosensor was fabricated on a 200 μm wide optical waveguide, by using standard thin film microelectronic techniques, such as: thermal diffusion processes, metals and dielectrics deposition, semiconductors growth, UV photolithography and wet-dry etching to define the structure geometries.

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