Thorough investigation of GaAs/AlGaAs quantum dot with respect to excitation laser power
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Rinaldo Trotta | Tutor di riferimento |
The development of more stable and enhanced entangled-photon sources is crucial for large scale applications and will thrive on quantum technology like quantum networks, quantum telecommunication as well as quantum computing. Entangled-photon sources operating on demand satisfy the need of scaling up the complexity of the current quantum communication technologies. Therefore, epitaxial quantum dots have emerged as pioneers providing the requirements of emitting on demand highly indistinguishable single photons as well as polarization-entangled photon pairs with very high efficiency and fast repetition rate. Thus, giving rise to an emergent research field on quantum dots (QDs) focusing on improving the entanglement fidelity, photon indistinguishability and brightness to advance further towards the goal of establishing a vast quantum network.
To accelerate these new developments ground-breaking research especially on the single- and entangled-photon sources is a basic necessity. Understanding the phenomena degrading the photon indistinguishability and entanglement fidelity would allow for their compensation. Therefore, this project focuses on a novel investigation of the non-classical light emission, more accurately the single-photon purity and the entanglement fidelity, of GaAs/AlGaAs semiconductor QDs with respect to its excitation laser power. To holistically investigate the QD source both simulations on the statistical emission behaviour and an experimental examination is carried out. Therefore, exhibiting detailed information on the source and hence giving rise to a broad new research area.