Wide-bandgap-semiconductor-based, three-phase voltage source inverter for high-frequency electromechanical energy conversion in next generation hybrid vehicles
The objective of the project is to design, build and test a high switching frequency, wide-bandgap-semiconductor-based, three-phase voltage source inverter for high-frequency electromechanical energy conversion. Such a converter is a key element in the trend towards higher power density in next generation light-duty vehicle powertrains. Gallium nitride High Electron Mobility Transistors will be used instead of standard silicon Insulated Gate Bipolar Transistors. Although it is known that the use of these ultra-fast switches allows to reach extremely high power densities, key issues related to the high dv/dt, which comes hand in hand with this technology, haven't been fully investigated in the literature. The main aim of this research project is to gain experience with this new power semiconductor technology and to understand and quantify its limitations when used in a high speed traction drive system for next generation hybrid vehicles.