Hydrogenated silicon sub-oxide film for an effective and thermal stable silicon surface passivation
04 Pubblicazione in atti di convegno
Serenelli Luca, Martini Luca, Menchini Francesca, Izzi Massimo, Bobeico Eugenia, Usatii Iuri, Asquini Rita, Caputo Domenico, Cesare Giampiero De, Veneri Paola Delli, Tucci Mario
Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiOx:H film within the role of CO and H in the film growth and composition and on how the Oxygen additionchanges the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime tEFF and FTIR spectraon as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers.