30–512 MHz power amplifier design using GaN transistor

2018

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS

30–512 MHz power amplifier design using GaN transistor

01 Pubblicazione su rivista

Pisa Stefano, Chicarella Simone, Cusani Roberto, Citrolo Jerome

ISSN: 0895-2477

In this article a class AB single-ended power amplifier with 30-512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.

atomic and molecular physics and optics condensed matter physics GaN transistors matching network power amplifier thermal model