Demetrio Logoteta | Ricerc@Sapienza

Pubblicazioni

Titolo	Pubblicato in	Anno
Design optimization of a THz receiver based on 60 nm complementary metal–oxide–semiconductor technology	ELECTRONICS	2024
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD	ADVANCED MATERIALS	2023
(La,Ba)SnO3-based thin-film transistors. Large-signal model and scaling projections	PHYSICAL REVIEW APPLIED	2022
alpha-As2Te3 as a platform for the exploration of the electronic band structure of single layer beta-tellurene	PHYSICAL REVIEW. B	2022
Envelope-function-based analysis of the dependence of shot noise on the gate voltage in disordered graphene samples	PHYSICAL REVIEW. B	2021
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors	NPJ 2D MATERIALS AND APPLICATIONS	2021
Electronic band gap of van der Waals alpha-As2Te3 crystals	APPLIED PHYSICS LETTERS	2021
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions	PHYSICAL REVIEW RESEARCH	2020
Anharmonic Phonon-Phonon Scattering Modeling of Three-Dimensional Atomistic Transport: An Efficient Quantum Treatment	Book of Abstracts 20th International Workshop on Computational Nanotechnology	2019
Drain-Backgate-Enhanced TFET Bases on In-Plane MoTe2/MoS2 Heterojunction	Book of Abstracts 20th International Workshop on Computational Nanotechnology	2019
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect	IEEE ELECTRON DEVICE LETTERS	2019
Quantum treatment of inelastic interactions for the modeling of nanowire field-effect transistors	MATERIALS	2019
Impact of the gate and insulator geometrical model on the static performance and variability of ultrascaled silicon nanowire FETs	IEEE TRANSACTIONS ON ELECTRON DEVICES	2018
Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure	JOURNAL OF PHYSICS. CONDENSED MATTER	2018
Physically based diagonal treatment of the self-energy of polar optical phonons. Performance assessment of III-V double-gate transistors	PHYSICAL REVIEW APPLIED	2018
Dual-gated WTe2/MoSe2 van der Waals tandem solar cells	JOURNAL OF PHYSICAL CHEMISTRY. C	2018
Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors	JOURNAL OF PHYSICS. D, APPLIED PHYSICS	2018
Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport. An efficient quantum treatment	PHYSICAL REVIEW. B	2018
Germanane MOSFET for subdeca nanometer high-performance technology nodes	IEEE TRANSACTIONS ON ELECTRON DEVICES	2018
Physically based diagonal treatment of polar optical phonons in III-V p-type double-gate transistors: comparison of InAs vs Ge and Si	Abstracts of IWCN	2017