Fritz Berkmann

Pubblicazioni

Titolo Pubblicato in Anno
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities ACS PHOTONICS 2024
Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors APPLIED PHYSICS LETTERS 2023
High mobility Ge 2DHG based MODFETs for low-temperature applications SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2023
Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx OPTICAL MATERIALS EXPRESS 2023
A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes REVIEW OF SCIENTIFIC INSTRUMENTS 2023
A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes REVIEW OF SCIENTIFIC INSTRUMENTS 2023
Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source IEEE PHOTONICS JOURNAL 2022
Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si MICROELECTRONICS JOURNAL 2022
Plasmonic gratings from highly doped Ge1-y Sn yfilms on Si Journal of Physics D: Applied Physics 2021
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures IEEE Explore 2021
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy IEEE Explore 2021
Titanium and Nickel as alternative materials for mid Infrared Plasmonic IEEE Xplore 2021
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers IEEE Xplore 2020
Plasmonics-integrated Ge PIN-photodetectors ECS TRANSACTIONS 2019
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates IEEE Xplore 2018
Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing MICROFLUIDICS AND NANOFLUIDICS 2017

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