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fritz.berkmann@uniroma1.it
Fritz Berkmann
Assegnista di ricerca
Struttura:
DIPARTIMENTO DI FISICA
E-mail:
fritz.berkmann@uniroma1.it
Pagina istituzionale corsi di laurea
Curriculum Sapienza
Pubblicazioni
Titolo
Pubblicato in
Anno
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities
ACS PHOTONICS
2024
Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors
APPLIED PHYSICS LETTERS
2023
High mobility Ge 2DHG based MODFETs for low-temperature applications
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2023
Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
OPTICAL MATERIALS EXPRESS
2023
A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes
REVIEW OF SCIENTIFIC INSTRUMENTS
2023
A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes
REVIEW OF SCIENTIFIC INSTRUMENTS
2023
Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source
IEEE PHOTONICS JOURNAL
2022
Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si
MICROELECTRONICS JOURNAL
2022
Plasmonic gratings from highly doped Ge1-y Sn yfilms on Si
Journal of Physics D: Applied Physics
2021
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures
IEEE Explore
2021
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy
IEEE Explore
2021
Titanium and Nickel as alternative materials for mid Infrared Plasmonic
IEEE Xplore
2021
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers
IEEE Xplore
2020
Plasmonics-integrated Ge PIN-photodetectors
ECS TRANSACTIONS
2019
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates
IEEE Xplore
2018
Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing
MICROFLUIDICS AND NANOFLUIDICS
2017
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