We propose a novel experimental approach to address the role of defects on the electronic and transport properties in graphene. To this aim we will use resonant Raman spectroscopy with excitation in the infrared and compare experimental data to ab-initio theoretical calculations. Raman scattering is a spectroscopic technique based on inelastic scattering of light, and provides information on vibrational and other low-frequency modes in a physical system. Resonant Raman spectroscopy, involving electronic transitions between real states in the scattering process, yields information also on electron-phonon (e-ph) and electron-electron (e-e) interaction processes. Noteworthy, while non-resonant Raman cross sections are proportional to the fourth power of the excitation laser energy, in a resonant process the scattering intensity can be greatly enhanced independently on the exciting wavelength. In this context, the introduction of infrared (IR) lasers instead of visible ones will allow the study of the interplay between defects, electronic and thermal transport in graphene with an unprecedented accuracy. Indeed, Raman spectra obtained with excitation laser wavelength of 1 micron and longer may yield a different peak lineshape. These vibrational modes, in particular their relative intensity and lineshape, can now be modelled starting from first-principle atomistic calculations based on the density functional theory (DFT) providing an extremely carefull test for the most advanced electron-phonon scattering theories. We will artificially induced low density of defects in graphene with electron-beam and follow the modification of the Raman spectra, comparing it to theoretical calculations.
