Ricerc@Sapienza

A focused laser beam will be used to control the electronic activity of N- and H-atoms in a dilute nitride (InGa)(AsN)/GaAs quantum well. Our approach yields sub-micron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.